# Created by Octave 3.2.4, Tue Nov 23 12:53:48 2010 EST <mockbuild@jetta.math.Princeton.EDU.private>
# name: cache
# type: cell
# rows: 3
# columns: 11
# name: <cell-element>
# type: string
# elements: 1
# length: 11
Mcapacitors
# name: <cell-element>
# type: string
# elements: 1
# length: 914
 -- Function File: [A,B,C]= Mcapacitors (STRING, PARAMETERS,
          PARAMETERNAMES, EXTVAR,INTVAR,T)
     SBN file implementing models for capacitors.

     STRING is used to select among models. Parameters are listed as
     inner items. Possible models are:

       1. STRING = "LIN"  (Linear Capacitor)
             - C -> capacitance value

       2. STRING = "MULTICAP" (Multipole Capacitor)
             - C -> capacitance values

       3. STRING = "PDE_NMOS" (Drift-Diffusion PDE NMOS capacitor)
             - tbulk  -> bulk thickness

             - tox    -> oxide thickness

             - Nnodes -> number of nodes of 1D grid

             - Na     -> bulk doping

             - toll   -> absolute tolerance

             - maxit  -> max iterations number

             - Area   -> device area

     See also: PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
     format  specifications



# name: <cell-element>
# type: string
# elements: 1
# length: 44
SBN file implementing models for capacitors.

# name: <cell-element>
# type: string
# elements: 1
# length: 15
Mcurrentsources
# name: <cell-element>
# type: string
# elements: 1
# length: 960
 -- Function File: [A,B,C]= Mcurrentsources (STRING, PARAMETERS,
          PARAMETERNAMES, EXTVAR,INTVAR,T)
     SBN file implementing models for current sources.

     STRING is used to select among models. Parameters are listed as
     inner items. Possible models are:

       1. STRING = "DC" (Static indipendent current source)
             - I -> Current source value

       2. STRING = "VCCS" (Voltage controlled current source)
             - K -> Control parameter

       3. STRING = "sinwave" (Sinusoidal indipendent current source)
             - shift -> mean value of sinusoidal input

             - Ampl  -> amplitude of sinusoidal wave

             - f     -> frequency of sinusoidal wave

             - delay -> delay of sinusoidal wave

       4. STRING = "VCPS" (Voltage controlled power source)
             - K -> Control parameter

     See also: PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
     format  specifications



# name: <cell-element>
# type: string
# elements: 1
# length: 49
SBN file implementing models for current sources.

# name: <cell-element>
# type: string
# elements: 1
# length: 6
Mdiode
# name: <cell-element>
# type: string
# elements: 1
# length: 883
 -- Function File: [A,B,C]= Mdiode (STRING, PARAMETERS, PARAMETERNAMES,
          EXTVAR,INTVAR,T)
     SBN file implementing models for diodes.

     STRING is used to select among models. Parameters are listed as
     inner items. Possible models are:

        - STRING = "simple" (Usual exponential diode model)
             - Is   -> reverse current

             - Vth  -> thermal voltage

             - Rpar -> parasitic resistance

        - STRING = "PDEsymmetric" (Drift-Diffusion PDE model)
             - len    -> diode length

             - Nnodes -> number of nodes of 1D grid

             - Dope   -> doping (abrupt and symmetric)

             - toll   -> absolute tolerance

             - maxit  -> max iterations number

             - Area   -> device area

     See also: PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
     format  specifications



# name: <cell-element>
# type: string
# elements: 1
# length: 40
SBN file implementing models for diodes.

# name: <cell-element>
# type: string
# elements: 1
# length: 10
Minductors
# name: <cell-element>
# type: string
# elements: 1
# length: 451
 -- Function File: [A,B,C]= Minductors (STRING, PARAMETERS,
          PARAMETERNAMES, EXTVAR,INTVAR,T)
     SBN file implementing models for inductors.

     STRING is used to select among models. Parameters are listed as
     inner items. Possible models are:

       1. STRING = "LIN" (Linear inductor model)
             - L -> inductance value

     See also: PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
     format  specifications



# name: <cell-element>
# type: string
# elements: 1
# length: 43
SBN file implementing models for inductors.

# name: <cell-element>
# type: string
# elements: 1
# length: 8
Mnmoscap
# name: <cell-element>
# type: string
# elements: 1
# length: 164
 -- Function File: [Q,C]= Mnmoscap (TBULK, TOX, AREA,
          VG,NA,NNODES,TOLL,MAXIT)
     INTERNAL FUNCTION:

     NOT SUPPOSED TO BE CALLED DIRECTLY BY USERS


# name: <cell-element>
# type: string
# elements: 1
# length: 19
INTERNAL FUNCTION:


# name: <cell-element>
# type: string
# elements: 1
# length: 8
Mnmosfet
# name: <cell-element>
# type: string
# elements: 1
# length: 1051
 -- Function File: [A,B,C]= Mnmosfet (STRING, PARAMETERS,
          PARAMETERNAMES, EXTVAR,INTVAR,T)
     SBN file implementing standard models for n-mosfets.

     STRING is used to select among models. Parameters are listed as
     inner items. Possible models are:

       1. STRING = "simple" (Standard model for MOSFET)
             - rd  -> parasitic resistance between drain and source

             - k   -> k parameter for usual mosfet model

             - Vth -> threshold voltage

       2. STRING = "lincap" (Adds RC parasitics)
             - rd  -> parasitic resistance between drain and source

             - k   -> k parameter for usual mosfet model

             - Vth -> threshold voltage

             - Rs  -> parasitic source resistance

             - Rd  -> parasitic drain resistance

             - Cs  -> gate-source capacitance

             - Cd  -> gate-drain capacitance

             - Cb  -> gate-bulk capacitance

     See also: PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
     format  specifications



# name: <cell-element>
# type: string
# elements: 1
# length: 52
SBN file implementing standard models for n-mosfets.

# name: <cell-element>
# type: string
# elements: 1
# length: 14
Mpdesympnjunct
# name: <cell-element>
# type: string
# elements: 1
# length: 184
 -- Function File: [J,G]= Mpdesympnjunct (LEN, DOPE, VA, AREA, NNODES,
          TOLL, MAXIT, PTOLL, PMAXIT)
     INTERNAL FUNCTION:

     NOT SUPPOSED TO BE CALLED DIRECTLY BY USERS


# name: <cell-element>
# type: string
# elements: 1
# length: 19
INTERNAL FUNCTION:


# name: <cell-element>
# type: string
# elements: 1
# length: 8
Mpmosfet
# name: <cell-element>
# type: string
# elements: 1
# length: 1051
 -- Function File: [A,B,C]= Mpmosfet (STRING, PARAMETERS,
          PARAMETERNAMES, EXTVAR,INTVAR,T)
     SBN file implementing standard models for p-mosfets.

     STRING is used to select among models. Parameters are listed as
     inner items. Possible models are:

       1. STRING = "simple" (Standard model for MOSFET)
             - rd  -> parasitic resistance between drain and source

             - k   -> k parameter for usual mosfet model

             - Vth -> threshold voltage

       2. STRING = "lincap" (Adds RC parasitics)
             - rd  -> parasitic resistance between drain and source

             - k   -> k parameter for usual mosfet model

             - Vth -> threshold voltage

             - Rs  -> parasitic source resistance

             - Rd  -> parasitic drain resistance

             - Cs  -> gate-source capacitance

             - Cd  -> gate-drain capacitance

             - Cb  -> gate-bulk capacitance

     See also: PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
     format  specifications



# name: <cell-element>
# type: string
# elements: 1
# length: 52
SBN file implementing standard models for p-mosfets.

# name: <cell-element>
# type: string
# elements: 1
# length: 10
Mresistors
# name: <cell-element>
# type: string
# elements: 1
# length: 1026
 -- Function File: [A,B,C]= Mresistors (STRING, PARAMETERS,
          PARAMETERNAMES, EXTVAR,INTVAR,T)
     SBN file implementing models for resistors.

     STRING is used to select among models. Parameters are listed as
     inner items. Possible models are:

       1. STRING = "LIN" (Linear resistor)
             - R -> resistance value

       2. STRING = "THERMAL" (Linear resistor with termal pin)
             - R0   -> reference resistance value at temperature `TNOM'

             - TC1  -> coefficient for first order Taylor expansion

             - TC2  -> coefficient for second order Taylor expansion

             - TNOM -> reference temperature

       3. STRING = "THERMAL1D" (1D Thermal resistor)
             - L  -> length of 1D domain

             - N  -> number of discretized elements

             - cv -> PDE coefficient for dynamic part

             - k  -> PDE coefficient for diffusion part

     See also: PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
     format  specifications



# name: <cell-element>
# type: string
# elements: 1
# length: 43
SBN file implementing models for resistors.

# name: <cell-element>
# type: string
# elements: 1
# length: 22
Mschichmanhodgesmosfet
# name: <cell-element>
# type: string
# elements: 1
# length: 1375
 -- Function File: [A,B,C]= Mschichmanhodgesmosfet (STRING, PARAMETERS,
          PARAMETERNAMES, EXTVAR,INTVAR,T)
     SBN file implementing Schichman-Hodges MOSFETs model.

     STRING is used to select among models. Possible models are:

       1. STRING = "NMOS" (Schichman-Hodges n-MOSFET)

       2. STRING = "PMOS" (Schichman-Hodges p-MOSFET)

       3. STRING = "NMOStpar" (n-MOSFET with temperature treated as a
          parameter)

       4. STRING = "PMOStpar" (p-MOSFET with temperature treated as a
          parameter)

       5. STRING = "NMOSnoP"  (n-MOSFET without heat-flux)

       6. STRING = "PMOSnoP"  (p-MOSFET without heat-flux)

     Parameters for all the above models are:
        * rd     -> parasitic resistance between drain and source

        * W      -> MOSFET width

        * L      -> channel length

        * mu0    -> reference value for mobility

        * Vth    -> threshold voltage

        * Cox    -> oxide capacitance

        * Cgs    -> gate-source capacitance

        * Cgd    -> gate-drain capacitance

        * Cgb    -> gate-bulk capacitance

        * Csb    -> source-bulk capacitance

        * Cdb    -> drain-bulk capacitance

        * Tshift -> shift for reference temperature on MOSFETs (default
          0)

     See also: PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
     format  specifications



# name: <cell-element>
# type: string
# elements: 1
# length: 53
SBN file implementing Schichman-Hodges MOSFETs model.

# name: <cell-element>
# type: string
# elements: 1
# length: 15
Mvoltagesources
# name: <cell-element>
# type: string
# elements: 1
# length: 1589
 -- Function File: [A,B,C]= Mvoltagesources (STRING, PARAMETERS,
          PARAMETERNAMES, EXTVAR,INTVAR,T)
     SBN file implementing models for voltage sources.

     STRING is used to select among models. Parameters are listed as
     inner items. Possible models are:

       1. STRING = "DC" (Static indipendent voltage source)
             - V -> Current source value

       2. STRING = "sinwave" (Sinusoidal indipendent voltage source)
             - shift -> mean value of sinusoidal input

             - Ampl  -> amplitude of sinusoidal wave

             - f     -> frequency of sinusoidal wave

             - delay -> delay of sinusoidal wave

       3. STRING = "pwl" (Piecewise linear voltage source)
             - takes as parameter times and values. For example `0 1 4
               6' means at time instant 0 value 1, at time instant 4
               value 6, etc.

       4. STRING = "squarewave" (Square wave)
             - low   -> low-state value

             - high  -> high-state value

             - tlow  -> duration of low-state

             - thigh -> duration of high-state

             - delay -> delay of square wave

             - start -> starting voltage value

       5. STRING = "step" (Voltage step)
             - low   -> low-state value

             - high  -> high-state value

             - tstep -> time instant of step transition

       6. STRING = "VCVS" (Voltage controlled voltage source)
             - K -> Control parameter

     See also: PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
     format  specifications



# name: <cell-element>
# type: string
# elements: 1
# length: 49
SBN file implementing models for voltage sources.

